plastic darlington complementary silicon power transistors . . . designed for generalpurpose amplifier and lowspeed switching applications. ? high dc current gain e h fe = 2000 (typ) @ i c = 2.0 adc ? monolithic construction with builtin baseemitter resistors to limit leakage multiplication ? choice of packages e MJE700 and mje800 series ??????????????????????? ??????????????????????? maximum ratings ??????????? ? ????????? ? ? ????????? ? ??????????? rating ????? ? ??? ? ? ??? ? ????? symbol ???? ? ?? ? ? ?? ? ???? MJE700 mje800 ???? ? ?? ? ? ?? ? ???? mje702 mje703 mje802 mje803 ??? ? ? ? ? ? ? ??? unit ??????????? ??????????? collectoremitter voltage ????? ????? v ceo ???? ???? 60 ???? ???? 80 ??? ??? vdc ??????????? ??????????? collectorbase voltage ????? ????? v cb ???? ???? 60 ???? ???? 80 ??? ??? vdc ??????????? ??????????? emitterbase voltage ????? ????? v eb ??????? ??????? 5.0 ??? ??? vdc ??????????? ??????????? collector current ????? ????? i c ??????? ??????? 4.0 ??? ??? adc ??????????? ??????????? base current ????? ????? i b ??????? ??????? 0.1 ??? ??? adc ??????????? ??????????? ????? ????? ??????? ??????? case 77 ??? ??? ??????????? ? ????????? ? ??????????? total power dissipation @ t c = 25 c derate above 25 c ????? ? ??? ? ????? p d ??????? ? ????? ? ??????? 40 0.32 ??? ? ? ? ??? watts w/ c ??????????? ? ????????? ? ??????????? operating and storage junction temperature range ????? ? ??? ? ????? t j , t stg ??????? ? ????? ? ??????? 55 to +150 ??? ? ? ? ??? c ??????????????????????? ??????????????????????? thermal characteristics ???????????? ???????????? characteristic ????? ????? symbol ?????? ?????? max ??? ??? unit ???????????? ? ?????????? ? ???????????? thermal resistance, junction to case case 77 to220 ????? ? ??? ? ????? r q jc ?????? ? ???? ? ?????? 3.13 2.50 ??? ? ? ? ??? c/w on semiconductor ? semiconductor components industries, llc, 2002 april, 2002 rev. 7 1 publication order number: MJE700/d MJE700 mje702 mje703 mje800 mje802 mje803 4.0 ampere darlington power transistors complementary silicon 40 watt 50 watt pnp npn case 7708 to225aa type MJE700703 mje800803 3 2 1 style 1: pin 1. emitter 2. collector 3. base
MJE700 mje702 mje703 mje800 mje802 mje803 http://onsemi.com 2 25 t c , case temperature ( c) 0 50 125 150 30 p d , power dissipation (watts) to-220ab 50 40 20 10 figure 1. power derating 75 100 to-126 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ?????????????????????? collectoremitter breakdown voltage (1) MJE700, mje800 (i c = 50 madc, i b = 0) mje702, mje703, mje802, mje803 ????? ????? v (br)ceo ??? ??? 60 80 ???? ???? e e ??? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = 60 vdc, i b = 0) MJE700, mje800 (v ce = 80 vdc, i b = 0) mje702, mje703, mje802, mje803 ????? ? ??? ? ????? i ceo ??? ? ? ? ??? e e ???? ? ?? ? ???? 100 100 ??? ? ? ? ??? m adc ?????????????????????? ? ???????????????????? ? ?????????????????????? collector cutoff current (v cb = rated bv ceo , i e = 0) collector cutoff current (v cb = rated bv ceo , i e = 0, t c = 100 c) ????? ? ??? ? ????? i cbo ??? ? ? ? ??? e e ???? ? ?? ? ???? 100 500 ??? ? ? ? ??? m adc ?????????????????????? emitter cutoff current (v be = 5.0 vdc, i c = 0) ????? i ebo ??? e ???? 2.0 ??? madc ????????????????????????????????? ????????????????????????????????? on characteristics ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? dc current gain (1) (i c = 1.5 adc, v ce = 3.0 vdc) MJE700, mje702, mje800, mje802 (i c = 2.0 adc, v ce = 3.0 vdc) mje703, mje803 (i c = 4.0 adc, v ce = 3.0 vdc) all devices ????? ? ??? ? ? ??? ? ????? h fe ??? ? ? ? ? ? ? ??? 750 750 100 ???? ? ?? ? ? ?? ? ???? e e e ??? ? ? ? ? ? ? ??? e ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collectoremitter saturation voltage (1) (i c = 1.5 adc, i b = 30 madc) MJE700, mje702, mje800, mje802 (i c = 2.0 adc, i b = 40 madc) mje703, mje803 (i c = 4.0 adc, i b = 40 madc) all devices ????? ? ??? ? ? ??? ? ????? v ce(sat) ??? ? ? ? ? ? ? ??? e e e ???? ? ?? ? ? ?? ? ???? 2.5 2.8 3.0 ??? ? ? ? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? baseemitter on voltage (1) (i c = 1.5 adc, v ce = 3.0 vdc) MJE700, mje702, mje800, mje802 (i c = 2.0 adc, v ce = 3.0 vdc) mje703, mje803 (i c = 4.0 adc, v ce = 3.0 vdc) all devices ????? ? ??? ? ? ??? ? ????? v be(on) ??? ? ? ? ? ? ? ??? e e e ???? ? ?? ? ? ?? ? ???? 2.5 2.5 3.0 ??? ? ? ? ? ? ? ??? vdc ????????????????????????????????? dynamic characteristics ?????????????????????? ?????????????????????? smallsignal current gain (i c = 1.5 adc, v ce = 3.0 vdc, f = 1.0 mhz) ????? ????? h fe ??? ??? 1.0 ???? ???? e ??? ??? e (1) pulse test: pulse width 300 m s, duty cycle 2.0%.
MJE700 mje702 mje703 mje800 mje802 mje803 http://onsemi.com 3 0.04 0.2 2.0 0.1 0.06 0.4 1.0 4.0 i c , collector current (amp) t, time (s) m 2.0 1.0 0.8 0.6 0.4 0.2 t s figure 2. switching times test circuit t r t d @ v be(off) = 0 pnp npn 4.0 0.6 figure 3. switching times v 2 approx +8.0 v 0 6.0 k scope v cc -30 v r c 51 for t d and t r , d 1 id disconnected and v 2 = 0, r b and r c are varied to obtain desired test currents. for npn test circuit, reverse diode, polarities and input pulses. 25 m s t r , t f 10 ns duty cycle = 1.0% + 4.0 v r b & r c varied to obtain desired current levels d 1 , must be fast recovery type, e.g.: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma v 1 approx -12 v tut r b d 1 150 t f v cc = 30 v i c /i b = 250 i b1 = i b2 t j = 25 c t, time (ms) 1.0 0.01 0.01 0.5 0.2 0.1 0.05 0.02 r(t), transient thermal resistance 0.05 1.0 2.0 5.0 10 20 50 100 200 1000 500 q jc (t) = r(t) q jc q jc = 3.12 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 0.2 0.05 0.01 single pulse 0.1 0.7 0.3 0.07 0.03 0.02 0.1 0.5 0.2 figure 4. thermal response (MJE700, 800 series) 0.03 3.0 30 300 0.3 (normalized)
MJE700 mje702 mje703 mje800 mje802 mje803 http://onsemi.com 4 10 v ce , collector-emitter voltage (volts) 0.1 100 2.0 5.0 0.5 figure 5. MJE700 series mje702, 703 MJE700 dc 1.0 3.0 1.0ms 70 50 30 20 10 7.0 5.0 100 m s t j = 150 c i c , collector current (amp) v ce , collector-emitter voltage (volts) 0.1 figure 6. mje800 series i c , collector current (amp) 100 70 50 30 20 10 7.0 5.0 0.2 0.7 0.3 7.0 10 2.0 5.0 0.5 1.0 3.0 0.2 0.7 0.3 7.0 5.0ms bonding wire limited thermally limited @ t c = 25 c (single pulse) second breakdown limited 100 m s 1.0ms 5.0ms dc t j = 150 c bonding wire limited thermally limited @ t c = 25 c (single pulse) second breakdown limited mje802, 803 mje800 activeregion safeoperating area there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figures 5 and 6 are based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) < 150 c. t j(pk) may be calculated from the data in figure 4. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
MJE700 mje702 mje703 mje800 mje802 mje803 http://onsemi.com 5 v ce , collector-emitter voltage (volts) v ce , collector-emitter voltage (volts) i c , collector current (amp) pnp MJE700 series npn mje800 series figure 7. dc current gain figure 8. collector saturation region figure 9. aono voltages 0.04 i c , collector current (amp) 300 0.06 0.2 2.0 k 800 4.0 k h fe , dc current gain v ce = 3.0 v t j = 125 c 3.0 k 0.1 0.6 25 c -55 c 1.0 k 0.4 1.0 6.0 k 400 600 2.0 4.0 0.04 300 0.06 0.2 2.0 k 800 4.0 k h fe , dc current gain 3.0 k 0.1 0.6 1.0 k 0.4 1.0 6.0 k 400 600 2.0 4.0 3.4 i b , base current (ma) 2.6 2.2 1.8 1.4 0.6 0.1 0.2 0.5 10 2.0 5.0 i c = 0.5 a 1.0 a 1.0 t j = 25 c 3.0 1.0 0.04 i c , collector current (amp) 1.4 1.0 v, voltage (volts) 2.2 1.8 0.6 0.2 0.06 0.2 2.0 0.1 0.6 0.4 1.0 4.0 0.04 i c , collector current (amp) 1.4 1.0 v, voltage (volts) 2.2 1.8 0.6 0.2 0.06 0.2 2.0 0.1 0.6 0.4 1.0 4.0 20 50 100 3.4 i b , base current (ma) 2.6 2.2 1.8 1.4 0.6 0.1 0.2 0.5 10 2.0 5.0 1.0 3.0 1.0 20 50 100 v be(sat) @ i c /i b = 250 v be @ v ce = 3.0 v v ce(sat) @ i c /i b = 250 2.0 a 4.0 a t j = 25 c v ce = 3.0 v t j = 125 c 25 c -55 c i c = 0.5 a 1.0 a t j = 25 c 2.0 a 4.0 a v be(sat) @ i c /i b = 250 v be @ v ce = 3.0 v v ce(sat) @ i c /i b = 250 t j = 25 c
MJE700 mje702 mje703 mje800 mje802 mje803 http://onsemi.com 6 package dimensions case 7709 issue w to225aa notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. b a m k f c q h v g s d j r u 13 2 2 pl m a m 0.25 (0.010) b m m a m 0.25 (0.010) b m dim min max min max millimeters inches a 0.425 0.435 10.80 11.04 b 0.295 0.305 7.50 7.74 c 0.095 0.105 2.42 2.66 d 0.020 0.026 0.51 0.66 f 0.115 0.130 2.93 3.30 g 0.094 bsc 2.39 bsc h 0.050 0.095 1.27 2.41 j 0.015 0.025 0.39 0.63 k 0.575 0.655 14.61 16.63 m 5 typ 5 typ q 0.148 0.158 3.76 4.01 r 0.045 0.065 1.15 1.65 s 0.025 0.035 0.64 0.88 u 0.145 0.155 3.69 3.93 v 0.040 --- 1.02 --- style 1: pin 1. emitter 2. collector 3. base
MJE700 mje702 mje703 mje800 mje802 mje803 http://onsemi.com 7 notes
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